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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2011, vol.40, no.1 2011, vol.40, no.2 2011, vol.40, no.3 2011, vol.40, no.4 2011, vol.40, no.5 2011, vol.40, no.6
2011, vol.40, no.7 2011, vol.40, no.8

题名作者出版年年卷期
Optimization of the Tomographic Algorithm of the Reconstruction of Plasma Irregularities in Process Reactors of MicroelectronicsA. V. Fadeev; K. V. Rudenko; V. F. Lukichev; A. A. Orlikovskii20112011, vol.40, no.2
Subthreshold Schmitt Trigger Using Body-Bias Technique for Ultra Low Power and High Performance ApplicationsVandana Niranjan; Maneesha Gupta; Nupur Pzakash20112011, vol.40, no.2
New CMOS Circuit Implementation of a One-Bit Full-Adder CellV. V. Shubin20112011, vol.40, no.2
Simulation of Formation of Nanostructures during Sputtering of the Surface by Ion BombardmentA. S. Rudyi; A. N. Kulikov; A. V. Metlitskaya20112011, vol.40, no.2
Double-Balanced Mixer Based on MOSFETsA. S. Korotkov20112011, vol.40, no.2
Oscillating Transient Currents in PbSnTe:In in a Backgroundless ModeA. N. Akimov; A. E. Klimov; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova; V. N. Shumskii20112011, vol.40, no.2
The Influence of the Sizes of the Cross Section of Mesapiezoresistors on Their CharacteristicsV. A. Gridchin; A. S. Cherkaev; M. A. Chebanov; V. B. Zinov'ev; I. G. Neizvestnyi; G. N. Kamaev20112011, vol.40, no.2
The Investigation of the Radiation Behavior of Cells of Energy-Independent Electrically Reprogrammable Memory Based on Self-Formed Conducting Nanostructures. I. Mode of Information StorageV. M. Mordvintsev; A. V. Sogoyan; S. E. Kudryavtsev; V. L. Levin20112011, vol.40, no.2