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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志:电子材料
收藏年代1999~2013



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1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2008, vol.19, no.1 2008, vol.19, no.10 2008, vol.19, no.11 2008, vol.19, no.12 2008, vol.19, no.2 2008, vol.19, no.3
2008, vol.19, no.4 2008, vol.19, no.5 2008, vol.19, no.6 2008, vol.19, no.7 2008, vol.19, no.8-9

题名作者出版年年卷期
Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporationFrancis Olabanji Lucas; A. Mitra; P. J. McNally L. O'Reilly; S. Daniels; Gomathi Natarajan; K. Durose; Y. Y. Proskuryakov; D. C. Cameron20082008, vol.19, no.2
Electrical studies on sputtered CuCl thin filmsGomathi Natarajan; R. T. Rajendra Kumar; S. Daniels; D. C. Cameron; P. J. McNally20082008, vol.19, no.2
Non-equilibrium Green's function method for modeling quantum electron transport in nano-scale devices with anisotropic multihand structureHelmy Fitriawan; Matsuto Ogawa; Satofumi Souma; Tanroku Miyoshi20082008, vol.19, no.2
Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in SiM. Morooka20082008, vol.19, no.2
In-line characterization of dielectric constant and leakage currents of low-k films with corona charge methodD. Fossati; C. Beitia; L. Plantier; G. Imbert; S. Passefort; M. Desbois; F. Volpi; J.-C. Royer20082008, vol.19, no.2
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substratesD. W. McNeill; S. Bhattacharya; H. Wadsworth; F. H. Ruddell; S. J. N. Mitchell; B. M. Armstrong H. S. Gamble20082008, vol.19, no.2
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognitionY. Matsui; Y. Miyoshi20082008, vol.19, no.2
Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxyHiroyuki Usui; Hidehiro Yasuda; Hirotaro Mori20082008, vol.19, no.2
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAsO. Reentila; A. Lankinen; M. Mattila; A. Saynatjoki; T. O. Tuomi; H. Lipsanen; L. O'Reilly; P. J. McNally20082008, vol.19, no.2
Dislocations at the interface between sapphire and GaNA. Lankinen; T. Lang; S. Suihkonen; O. Svensk A. Saynatjoki; T. O. Tuomi; P. J. McNally; M. Odnoblyudov; V. Bougrov; A. N. Danilewsky P. Bergman; R. Simon20082008, vol.19, no.2
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