长垣产业园区科技文献服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2011 2012
2013 2014 2017 2018 2019 2020
2021 2022 2023

2021, vol.30, no.1/2

题名作者出版年年卷期
Cylindrical SOI Schottky Barrier MOSFET with High Linearity and Low Static Power for Digital and Analog Circuits ApplicationSaxena Amit; Kumar Manoj; Sharma R. K.; Gupta R. S.20212021, vol.30, no.1/2
Electrical Analysis and Comparison of Ta2O5 Tunneling Oxide with SiO2 in Passivated c-Si Solar CellVerma Manish; Mishra Guru Prasad20212021, vol.30, no.1/2
Design of Low-Power 16-Bit R-2R Digital-to-Analog Converter for Effective Biomedical Signal ProcessingSingh Tejender; Tripathi Suman Lata; Prakash Kolla Bhanu20212021, vol.30, no.1/2
Investigation of Structural Parameters Impact on Sensitivity of InP/InGaAs/InP Channel Double Gate MOSFET for Biosensing ApplicationMohanty Soumya S.; Mishra Sikha; Mohapatra Meryleen; Mishra Guru Prasad20212021, vol.30, no.1/2
Process Induced Stress Optimization for Compressively Stressed p-Channel FinFET at 7NJena J.; Dash T. P.; Mohapatra E.; Das S.; Nanda J.20212021, vol.30, no.1/2
PrefaceSarkar Angsuman; Sarkar Chandan Kumar20212021, vol.30, no.1/2



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024