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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



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2009, vol.19, no.1

题名作者出版年年卷期
BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLESD. P. URCIUOLI; VICTOR VELIADIS20092009, vol.19, no.1
PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM×4 MM SILICON CARBIDE GTOsHEATHER O'BRIEN; M. GAIL KOEBKE20092009, vol.19, no.1
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFETHARSH NAIK; YI WANG; T. PAUL CHOW20092009, vol.19, no.1
EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATEHARSH NAIK; KE TANG; T. PAUL CHOW20092009, vol.19, no.1
4-NM AlN BARRIER ALL BINARY HFET WITH SiN{sub}x GATE DIELECTRICTOM ZIMMERMANN; YU CAO; DEBDEEP JENA; HUILI GRACE XING; PAUL SAUNIER20092009, vol.19, no.1
GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONSTETSUZO UEDA; YASUHIRO UEMOTO; TSUYOSHI TANAKA; DAISUKE UEDA20092009, vol.19, no.1
InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDEM. ALOMARI; F. MEDJDOUB; E. KOHN; M-A. DI FORTE-POISSON; S. DELAGE; J.-F. CARLIN; N. GRANDJEAN; C. GAQUIERE20092009, vol.19, no.1
HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIREJUNXIA SHI; M. POPHRISTIC; L. F. EASTMAN20092009, vol.19, no.1
PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACESKE TANG; WEIXIAO HUANG; T. PAUL CHOW20092009, vol.19, no.1
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIREX. CHEN; K. D. MATTHEWS; D. HAO; W. J. SCHAFF; L. F. EASTMAN; W. WALUKIEWICZ; J. W. AGER; K. M. YU20092009, vol.19, no.1
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