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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000~2023



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2013 2014 2017 2018 2019 2020
2021 2022 2023

2014, vol.23, no.1/2 2014, vol.23, no.3/4

题名作者出版年年卷期
Reflections on the Future Electric Power Grid Monitoring SystemMichael Gouzman; Serge Luryi20142014, vol.23, no.3/4
Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film TransistorsOlivier Bonnaud; Peng Zhang; Emmanuel Jacques; Regis Rogel20142014, vol.23, no.3/4
Novel Cascade Diode Lasers Based on Type-I Quantum WellsRui Liang; Leon Shterengas; Gela Kipshidze; Takashi Hosoda; Sergey Suchalkin; Gregory Belenky20142014, vol.23, no.3/4
Structural and Optical Characteristics of Metamorphic Bulk InAsSbYouxi Lin; Ding Wang; Dmitry Donetsky; Gela Kipshidze; Leon Shterengas; Gregory Belenky; Wendy L. Sarney; Stefan P. Svensson20142014, vol.23, no.3/4
Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo SubstratesSteven Albert; Ana Maria Bengoechea-Encabo; Francesca Barbagini; David Lopez-Rormero; Miguel Angel Sanchez-Garcia; Enrique Calleja; Pierre Lefebvre; Xiang Kong; Uwe Jahn; Achim Trampert; Marcus Muller; Frank Bertram; Gordon Schmidt20142014, vol.23, no.3/4
Demonstration of Unified Memory in FinFETsSung-Jae Chang; Maryline Bawedin; Jong-Hyun Lee; Jung-Hee Lee; Sorin Cristoloveanu20142014, vol.23, no.3/4
Deep UV LEDs for Public Health ApplicationsIgnas Gaska; Olga Bilenko; Saulius Smetona; Yuri Bilenko; Remis Gaska; Michael Shur20142014, vol.23, no.3/4
Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on Suppression of Current Collapse in AlGaN/GaN HFETsHee-Sung Kang; Dong-Seok Kim; Chul-Ho Won; Young-Jo Kim; Young Jun Yoon; Do-Kywn Kim; Jung-Hee Lee; YoungHo Bae; Sorin Cristoloveanu20142014, vol.23, no.3/4
Graphene Active Plasmonics for New Types of Terahertz LasersTaiichi Otsuji; Akira Satou; Stephane Boubanga Tombet; Alexander A. Dubinov; Vyacheslav V. Popov; Victor Ryzhii; Michael S. Shur20142014, vol.23, no.3/4
Development of III-Sb Technology for p-Channel MOSFETsAndrew Greene; Shailesh Madisetti; Michael Yakimov; Vadim Tokranov; Serge Oktyabrsky20142014, vol.23, no.3/4
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