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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



全部

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2013 2014 2017 2018 2019 2020
2021 2022 2023

2019, vol.28, no.1/2 2019, vol.28, no.3/4

题名作者出版年年卷期
Recent Progress in III-Nitride Tunnel Junction-Based OptoelectronicsZane Jamal-Eddine; Yuewei Zhang; Siddharth Rajan20192019, vol.28, no.1/2
β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device FabricationAshley (Zhe) Jian; Kamruzzaman Khan; Elaheh Ahmadi20192019, vol.28, no.1/2
Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic DevicesM. A. Mastro; J. K. Hite; C. R. Eddy; M. J. Tadjer; S. J. Pearton; F. Ren; J. Kim20192019, vol.28, no.1/2
PrefaceUttam Singisetti; Towhidur Razzak; Yuewei Zhang20192019, vol.28, no.1/2
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency ElectronicsMd Nazmul Hasan; Edward Swinnich; Jung-Hun Seo20192019, vol.28, no.1/2
On the Progress Made in GaN Vertical Device TechnologyDong Ji; Srabanti Chowdhury20192019, vol.28, no.1/2
Substrate Effects in GaN-on-Silicon RF Device TechnologyHareesh Chandrasekar20192019, vol.28, no.1/2
Ultra-Wide Bandgap AlxGa1-xN Channel TransistorsTowhidur Razzak; Siddharth Rajan; Andrew Armstrong20192019, vol.28, no.1/2
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal DissipationStefan Degroote; Marianne Germain; Filip Gucmann; Callum Middleton; James W. Pomeroy; Martin Kuball; Riad Kabouche; Romain Pecheux; Kathia Harrouche; Etienne Okada; Farid Medjdoub; Joff Derluyn20192019, vol.28, no.1/2
Application of Atom Probe Tomography for Advancing GaN Based TechnologyOlivia G. Licata; Baishakhi Mazumder20192019, vol.28, no.1/2
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