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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2016, vol.45, no.1 2016, vol.45, no.2 2016, vol.45, no.3 2016, vol.45, no.4 2016, vol.45, no.5 2016, vol.45, no.6
2016, vol.45, no.7 2016, vol.45, no.8/9

题名作者出版年年卷期
Experimental Diamond Photonics: Current State and Prospects. Part IIA. V. Tsukanov; I. Yu. Kateev20162016, vol.45, no.6
Integration of Functional Elements of Resistive Nonvolative Memory with 1T-1R TopologyD. V. Negrov; R. V. Kirtaev; I. V. Kiseleva; E. V. Kondratyuk; A. V. Shadrin; A. V. Zenkevich; O. M. Orlov; E. S. Gornev; G. Ya. Krasnikov20162016, vol.45, no.6
Electrical Properties of a TiN/Ti_xAl_(1-x)O_y/TiN Memristor Device Manufactured by Magnetron SputteringA. N. Bobylev; S. Yu. Udovichenko20162016, vol.45, no.6
Mo/Al/Mo/Au-Based Ohmic Contacts to AlGaN/GaN HeterostructuresM. N. Kondakov; S. V. Chernykh; A. V. Chernykh; N. B. Gladysheva; A. A. Dorofeev; S. I. Didenko; K. D. Shcherbachev; N. Yu. Tabachkova; D. B. Kaprov20162016, vol.45, no.6
Ways of Increasing the Service Life of Positive PhotoresistsV. I. Lebedev; V. E. Kotomina; S. V. Zelentsov20162016, vol.45, no.6
Simulation of Mass Transfer of Liquids through Microchannels under the Influence of Surface Acoustic WavesV. V. Sirotkin20162016, vol.45, no.6
Upset-Resilient RAM on STG DICE Memory Elements with the Spaced Transistors into Two GroupsV. Ya. Stenin; Yu. V. Katunin; P. V. Stepanov20162016, vol.45, no.6
Influence of External Conditions on Physical Processes and Plasma Parameters in a Model of a High-Frequency Hybrid Plasma SystemA. F. Aleksandrov; A. K. Petrov; K. V. Vavilin; E. A. Kral'kina; P. A. Neklyudova; A. M. Nikonov; V. B. Pavlov; A. A. Airapetov; V. V. Odinokov; G. Ya. Pavlov; V. A. Sologub20162016, vol.45, no.6
Smart Fiber-Optical Sensor of Acoustic Pressure with a Possibility of Distant Correction of SensitivityF. A. Egorov; V. V. Amelichev; S. S. Generalov; S. V. Nikiforov; S. V. Shamanaev; Ya. V. Goldberg20162016, vol.45, no.6



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