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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



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2008, vol.18, no.1 2008, vol.18, no.2 2008, vol.18, no.3 2008, vol.18, no.4

题名作者出版年年卷期
CHALLENGES AND PROGRESS IN III-V MOSFETs FOR CMOS CIRCUITSSERGE OKTYABRSKY; MICHAEL YAKIMOV; VADIM TOKRANOV; RAMA KAMBHAMPATI; HASSARAM BAKHRU; SERGEI KOVESHNIKOV; WILMAN TSAI; FENG ZHU; JACK LEE20082008, vol.18, no.4
SHORT CHANNEL, FLOATING BODY, AND 3D COUPLING EFFECTS IN TRIPLE-GATE MOSFETKYOUNG-IL NA; JUNG-HEE LEE; SORIN CRISTOLOVEANU; YOUNG-HO BAE; YOUNG-HO BAE; WADE XIONG20082008, vol.18, no.4
ANALOG AND DIGITAL PERFORMANCE OF THE SCREEN-GRID FIELD EFFECT TRANSISTOR (SGrFET)K. FOBELETS; P. W. DING; Y. SHADROKH; J. E. VELAZQUEZ-PEREZ20082008, vol.18, no.4
ANALYTICAL CHARACTERIZATION AND MODELING OF SHIELDED TEST STRUCTURES FOR RF-CMOSEMMANUEL TORRES-RIOS; REYDEZEL TORRES-TORRES; ROBERTO MURPHY-ARTEAGA; EDMUNDO A. GUTIERREZ-D20082008, vol.18, no.4
GERMANIUM ON SAPPHIREH. S. GAMBLE; P. T. BAINE; H. WADSWORTH; Y. H. LOW; P. V. RAINEY; F. H. RUDDELL; B. M. ARMSTRONG; D. W. McNEILL; S. J. N. MITCHELL20082008, vol.18, no.4
SINGLE EVENT EFFECTS IN THE NANO ERAM. L. ALLES; L. W. MASSENGILL; R. D. SCHRIMPF; R. A. WELLER; K. F. GALLOWAY20082008, vol.18, no.4
AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMTTOUHIDUR RAHMAN; MOHAMMAD A. HUQUE; SYED K. ISLAM20082008, vol.18, no.4
NANOCOMPONENTS: A DESIGNER'S POINT OF VIEWHerve FANET20082008, vol.18, no.4
SILICON SPINTRONICSIAN APPELBAUM20082008, vol.18, no.4
NANO CHARACTERIZATION OF MATERIALSDIETER K. SCHRODER20082008, vol.18, no.4
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