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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



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2007, vol.17, no.1 2007, vol.17, no.2 2007, vol.17, no.3 2007, vol.17, no.4

题名作者出版年年卷期
WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONSM. Sugimoto; H. Ueda; T. Uesugi; T. Kachi20072007, vol.17, no.1
A GAN ON SIC HFET DEVICE TECHNOLOGY FOR WIRELESS INFRASTRUCTURE APPLICATIONSB. Green; H. Henry; K. Moore; J. Abdou; R. Lawrence; F. Clayton; M. Miller; J. Crowder; E. Mares; O. Hartin; C. Liu; C. Weitzel20072007, vol.17, no.1
Drift velocity limitation in GaN HEMT channelsARVYDAS MATTJLIONIS20072007, vol.17, no.1
SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORSValentin O. Turin; Michael S. Shur; Dmitry B. Veksler20072007, vol.17, no.1
LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODESY. Li; W. Zhao; Y. Xia; M. Zhu; J. Senawiratne; T. Detchprohm; C. Wetzel20072007, vol.17, no.1
SPATIAL SPECTRAL ANALYSIS IN HIGH BRIGHTNESS GaInN/GaN LIGHT EMITTING DIODEST. Detchprohm; Y. Xia; J. Senawiratne; Y. Li; M. Zhu; W. Zhao; Y. Xi; E. F. Schubert; C. Wetzel20072007, vol.17, no.1
SELF-INDUCED SURFACE TEXTURING OF Al{sub}2O{sub}3 BY MEANS OF INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING IN Cl{sub}2 CHEMISTRYPAOLO BATONI; EDWARD B. STOKES; TRUSHANT K. SHAH; MICHAEL D. HODGE; THOMAS J. SULESKI20072007, vol.17, no.1
FIELD AND THERMIONIC FIELD TRANSPORT IN ALUMINIUM GALLIUM ARSENIDE HETEROJUNCTION BARRIERSD. V. MORGAN; A. PORCH20072007, vol.17, no.1
ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODESP. A. Losee; C. Li; R. J. Kumar; T. P. Chow; I. B. Bhat; R. J. Gutmann20072007, vol.17, no.1
Geometry and Short Channel Effects of Enhancement-Mode n-Channel GaN MOSFETs on p and n GaN/Sapphire SubstratesW. Huang; T. Khan; T. P. Chow20072007, vol.17, no.1
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