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期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



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2006, vol.16, no.1 2006, vol.16, no.2 2006, vol.16, no.3 2006, vol.16, no.4

题名作者出版年年卷期
ON THE POSSIBILITY OF AN INTERSUBBAND LASER IN SILICON-ON-INSULATORSERGE LURYI; ALEX ZASLAVSKY20062006, vol.16, no.2
TOWARD ULTRA-LOW POWER III-V QUANTUM LARGE SCALE INTEGRATED CIRCUITS FOR UBIQUITOUS NETWORK ERAHIDEKI HASEGAWA; SEIYA KASAI; TAKETOMO SATO20062006, vol.16, no.2
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICESLester F. Eastman; William J. Schaff; Ho-Young Cha; Xiao-Dong Chen; Michael G. Spencer; Brian K. Ridley20062006, vol.16, no.2
CURRENT INSTABILITY AND PLASMA WAVE GENERATION IN UNGATED TWO DIMENSIONAL ELECTRON LAYERSMICHEL DYAKONOV; MICHAEL SHUR20062006, vol.16, no.2
HIGH-POWER SWITCHING USING III-NITRIDE METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURESG. SIMIN; M. ASIF KHAN; M. S. SHUR; R. GASKA20062006, vol.16, no.2
RECENT PROGRESS ON GaN-BASED ELECTRON DEVICESYasuhiro Uemoto; Yutaka Hirose; Tomohiro Murata; Hidetoshi Ishida; Masahiro Hikita; Manabu Yanagihara; Kaoru Inoue; Tsuyoshi Tanaka; Daisuke Ueda; Takashi Egawa20062006, vol.16, no.2
ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGYMarvin H. White; Yu (Richard) Wang; Stephen J. Wrazien; Yijie (Sandy) Zhao20062006, vol.16, no.2
A QUANTUM DOT MICROCAVITY TERAHERTZ LASERG. S. Solomon; Z. G. Xie; M. Agrawal20062006, vol.16, no.2
THE GROWTH AND CHARACTERIZATION OF ROOM TEMPERATURE FERROMAGNETIC WIDEBAND-GAP MATERIALS FOR SPINTRONIC APPLICATIONSMATTHEW H. KANE; MARTIN STRASSBURG; WILLIAM E. FENWICK; ALI ASGHAR; IAN T. FERGUSON20062006, vol.16, no.2
ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORSBURAK OZPINECI; MADHU SUDHAN CHINTHAVALI; LEON M. TOLBERT20062006, vol.16, no.2
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