长垣产业园区科技文献服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2023



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2011 2012
2013 2014 2017 2018 2019 2020
2021 2022 2023

2005, vol.15, no.1 2005, vol.15, no.2 2005, vol.15, no.3 2005, vol.15, no.4

题名作者出版年年卷期
RADIATION DEFECT ENGINEERING - Ion-Stimulated ProcessesKozlovski, V.; Abrosimova, V.20052005, vol.15, no.1
RADIATION DEFECT ENGINEERING - Transmutation Doping of Semiconductors by Charged ParticlesKozlovski, V.; Abrosimova, V.20052005, vol.15, no.1
RADIATION DEFECT ENGINEERING - Doping of Semiconductors Using Radiation DefectsKozlovski, V.; Abrosimova, V.20052005, vol.15, no.1
RADIATION DEFECT ENGINEERING - Formation of Buried Porous and Damaged LayersKozlovski, V.; Abrosimova, V.20052005, vol.15, no.1



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024