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期刊


ISSN1546-1998
刊名Journal of Low Power Electronics
参考译名低功耗电子学杂志
收藏年代2006～2019



全部

2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019

2012, vol.8, no.1 2012, vol.8, no.2 2012, vol.8, no.3 2012, vol.8, no.4 2012, vol.8, no.5

题名作者出版年年卷期
Circuit-Level Modeling of SRAM Minimum Operating Voltage Vddmin in the C40 NodeLorenzo Ciampolini; Siddharth Gupta; Olivier Callen; Amit Chhabra; Dibya Dipti; Sebastien Haendler; Shishir Kumar; Daniel Noblet; Pierre Malinge; Nicolas Planes; David Turgis; Christophe Lecocq; Shamsi Azmi20122012, vol.8, no.1
Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down ApplicationsJean-Michel Portal; Marc Bocquet; Damien Deleruyelle; Christophe Muller20122012, vol.8, no.1
Adaptive Input-Output Selection Based On-Chip Router ArchitectureM. Daneshtalab; M. Kamali; M. Ebrahimi; S. Mohammadi; A. Afzali-Kusha; J. Plosila20122012, vol.8, no.1
Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage VariationsSmriti Joshi; Anne Lombardot; Philippe Flatresse; Carmelo D'Agostino; Andre Juge; Edith Beigne; Stephane Girard20122012, vol.8, no.1
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and BelowJ. Mazurier; O. Weber; F. Andrieu; A. Toffoli; O. Thomas; F. Allain; J.-P. Noel; M. Belleville; O. Faynot; T. Poiroux20122012, vol.8, no.1
Optimization of On-Chip Interconnect Signaling for Low Energy and High PerformanceGe Chen; Saeid Nooshabadi20122012, vol.8, no.1
Sub-Threshold Delay and Power Analysis of Complementary Metal-Oxide Semiconductor Buffer Driven Interconnect Load for Ultra Low Power ApplicationsRohit Dhiman; Rajeevan Chandel20122012, vol.8, no.1
A 1.3-μW, 0.6-μm CMOS Current-Frequency Analog-Digital Converter for Implantable Blood-Glucose MonitorsGabriel A. Rincon-Mora; Andres A. Blanco; Justin P. Vogt20122012, vol.8, no.1
Low-Power Data Driven Symbol Decoder for a UHF Passive RFID TagVyasa Sai; Ajay Ogirala; Marlin H. Mickle20122012, vol.8, no.1
A 0.4 V 520 nW 990 μm~2 Fully Integrated Frequency-Domain Smart Temperature Sensor in 65 nm CMOSMing-Hung Chang; Shang-Yuan Lin; Wei Hwang20122012, vol.8, no.1
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