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期刊

ISSN	1340-2625
刊名	まてりあ
参考译名	金属
收藏年代	1998～2023

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2001, vol.40, no.1	2001, vol.40, no.10	2001, vol.40, no.11	2001, vol.40, no.12	2001, vol.40, no.2	2001, vol.40, no.3
2001, vol.40, no.4	2001, vol.40, no.5	2001, vol.40, no.6	2001, vol.40, no.7	2001, vol.40, no.8	2001, vol.40, no.9

题名

作者

出版年

年卷期

Si twinning superlattice

Hiroki Hibino; Toshio Ogino

2001

2001, vol.40, no.12

Self-organization of Ge islands on Si

Hiroo Omi; Toshio Ogino

2001

2001, vol.40, no.12

Direct atomistic observation of reactions in metal/semiconductor Interfaces by STEM

Nobuo Tanaka; Shigeaki Zaima; Yukio Yasuda

2001

2001, vol.40, no.12

Elemental analysis of O-N-O dielectric in um-scale

Tetsuo Oikawa; Masahiro Kawasaki

2001

2001, vol.40, no.12

Nano-scale defect analysis of gate leak in semiconductor device by FIB and TEM

Naoko Kato; Juichi Matsuzawa; Yoshiteru Kohno; Hiroyasu Saka

2001

2001, vol.40, no.12

Interfacial phenomena of a-Si thin film transistor during TEM observation

Kotaro Kuroda; Hiroyasu Saka; Satoshi Tsuji

2001

2001, vol.40, no.12

Atomic structure at a SiO{sub}2/Si interface

Koji Watanabe; Yoshiyuki Miyamoto; Nobuyuki Ikarahi

2001

2001, vol.40, no.12

Cross-sectional TEM analysis of packaging technology for LCD

Katsuhiro Tsujimoto; Satoshi Tsuji; Kotaro Kuroda; Hiroyasu Saka

2001

2001, vol.40, no.12

Relation between Schottky barrier height and crystalline alignment of Al films on Si substrates

Yoshinao Miura; Shinji Fujieda; Kazuyuki Hirose

2001

2001, vol.40, no.12

Direct Epi-CoSi{sub}2 formation form Co/intermediate layer/(100)Si

Shinichi Ogawa

2001

2001, vol.40, no.12