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ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



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2011, vol.111, no.102 2011, vol.111, no.103 2011, vol.111, no.106 2011, vol.111, no.108 2011, vol.111, no.109 2011, vol.111, no.111
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题名作者出版年年卷期
Highly reliable, high speed Solid-State Drive (SSD)Ken Takeuchi; Shuhei Tanakamaru; Chinglin Hung20112011, vol.111, no.6
ペロブスカイト酸化物系ReRAMのスイッチングメカニズム花田明紘; 木下健太郎; 松原勝彦; 福原貴博; 岸田悟20112011, vol.111, no.6
二元系遷移金属酸化物ReRAMにおける各抵抗状態の相関関係の分析田中隼人; 木下健太郎; 岸田悟20112011, vol.111, no.6
高速記録再生回路を有するReRAMテストマクロ－Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput筒井敬一; 大塚渉; 宮田幸児; 北川真; 対馬朋人20112011, vol.111, no.6
スピン注入RAM（SPRAM）の動向および多値化技術石垣隆士; 河原尊之; 竹村理一郎; 小埜和夫; 伊藤顕知; 大野英男20112011, vol.111, no.6
24nmプロセスで製造された151mm~2 64Gbit 2bit/cell NAND型フラッシュメモリの開発福田浩一; 渡辺慶久; 牧野英一; 川上浩一; 佐藤順平; 高際輝男; 金川直晃; 志賀仁; 常盤直哉; 進藤佳彦; 枝広俊昭; 小川武志; 岩井信; 永尾理; 武者淳二; 源貴利20112011, vol.111, no.6
相変化デバイスの動向とTIAでの研究活動高浦則克20112011, vol.111, no.6
三次元NANDフラッシュメモリ有留誠一20112011, vol.111, no.6
しきい値ばらつき耐性を有する0.45V動作9T/18TデュアルポートSRAM柳田晃司; 野口紘希; 奥村俊介; 高木智也; 久賀田耕史; 吉本雅彦; 川口博20112011, vol.111, no.6
デジタル化したレプリカビット線遅延を用いたランダムばらつきに強いSRAMセンスアンプタイミング生成回路仁木祐介; 川澄篤; 鈴木東; 武山泰久; 平林修; 櫛田桂一; 橘文彦; 藤村勇樹; 矢部友章20112011, vol.111, no.6
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