长垣产业园区科技文献服务平台

会议文集


会议名Symposium"Processes at the Semiconductor Solution Interface 10 & Wide-Bandgap Semiconductor Materials and Devices 24", Held during 243rd ECS Meeting
中译名《第十届半导体-溶液界面处理研讨会,第二十四届宽带隙半导体材料及器件讨论会》
机构The Electrochemical Society (ECS)
会议日期28 May 2023 - 2 June 2023
会议地点Boston, Massachusetts, USA
出版年2023
馆藏号348016


题名作者出版年
Cu(InGa)(SeS)_2 Electrodeposition from a Single Bath Using Pulsing Current TechniqueMahfouz Saeed2023
Title: Consideration of Improved Adhesion of Direct Copper Seed Layer By Medium-Vacuum Sputtering Using Vacuum Ultraviolet LightS. Endo; A. Shimizu.; H. Ueyama; K. Fukada; Y. Kashiwagi; K. Hashimoto; H. Takamatsu; R. Takahashi2023
Reversible Total Ionizing Dose Effects in NiO/Ga_2O_3 Heteroj unction RectifiersJian-Sian Li; Chao-Ching Chiang; Xinyi Xia; Sergei Stepanoff; Aman Haque; Douglas E. Wolfe; Fan Ren; S. J. Pearton2023
Enhanced UV Absorption By 2D MoS_2 NanoparticlesM. A. Almansoori; A. Rezk; S. Abdul Hadi; A. Nayfeh2023
Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor SubstratesT. Matsumae; H. Umezawa; Y. Kurashima; H. Takagi2023
Determination of Type II Band Alignment of NiO/a-Ga_2O_3 For Annealing Temperatures Up To 600℃Xinyi Xia; Jian-Sian Li; Chao-Ching Chiang; Timothy Jinsoo Yoo; Eitan Hershkovitz; Fan Ren; Honggyu Kim; Jihyun Kim; Dae-Woo Jeon; Ji-Hyeon Park; S. J. Pearton2023
Selective Wet and Dry Etching of NiO over β-Ga_2O_3Chao-Ching Chiang; Xinyi Xia; Jian-Sian Li; Fan Ren; S. J. Pearton2023
NiO/β-(Al_xGa_(1-x))_2O_3/Ga_2O_3 Heteroj unction Lateral Rectifiers with Reverse Breakdown Voltage > 7kVHsiao-Hsuan Wan; Jian-Sian Li; Chao-Ching Chiang; Xinyi Xia; Fan Ren; Hannah N. Masten; James Spencer Lundh; Joseph A. Spencer; Fikadu Alema; Andrei Osinsky; Alan G. Jacobs; Karl Hobart; Marko J. Tadjer; S. J. Pearton2023
High-Vacuum Chemical Vapor Deposition of Monolayer Hexagonal Boron Nitride on Ge(001) from BorazineKatherine A. Su; Songying Li; Michael S. Arnold2023
Fabrication and Device Performance of 2.7 kV/2.5A NiO/Ga_2O_3 Heteroj unction Power RectifiersJian-Sian Li; Xinyi Xia; Chao-Ching Chiang; Fan Ren; Stephen J. Pearton2023
Application of Synchrotron X-ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power DevicesY. Liu; S. Hu; Z. Chen; Q. Cheng; B. Raghothamachar; M. Dudley2023
A Capacitor-Based Synaptic Device with IGZO Access Transistors for Neuromorphic ComputingJongun Won; Youngchae Roh; Jaehyeon Kang; Minseung Kang; Yeaji Park; Hyeongjun Seo; Changhoon Joe; Sangbum Kim2023