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会议文集


会议名Symposium"Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post CMOS Applications 13 & Advanced CMOS-Compatible Semiconductor Devices 20", Held during 243rd ECS Meeting
中译名《第十三届与硅兼容的先进CMOS和后CMOS应用的新兴材料、工艺和技术讨论会，第二十届先进的CMOS兼容半导体器件讨论会》
机构The Electrochemical Society (ECS)
会议日期28 May 2023 - 2 June 2023
会议地点Boston, Massachusetts, USA
出版年2023
馆藏号348015


题名作者出版年
Measuring Temporal Variation of Concentration of ALD Precursor TEMAZ in Process Chamber Using UV Absorption MethodT. Inada; T. Goto; T. Suwa; M. Nagase; H. Ishii; Y. Shiba; Y. Sakai; A. Sutoh; T. Morimoto; Y. Shirai; R. Kuroda; S. Sugawa2023
Boundary-Directed Epitaxy of Block Copolymers Toward Sub-10 nm FabricationKatherine A. Su; Robert M. Jacobberger; Liliana Stan; Michael S. Arnold2023
Manufacturing of Nanosheets and Multilayer Nanogaps in SiliconW. Lerch; M. Heigl; T. X. A. Bui-Tran; R. Merkel; I. Eisele2023
Improvements in Thermal Budget and Film Properties Using Low Pressure Cure Technology for Advanced 3D Integration PackagingK. Song; Z. Karim; X. Tan; A. Bhat; K. Sautter; A. Mingardi; D. Vangoidsenhoven2023
Aluminum Josephson Junction Formation on 200 mm Wafers Using Different Oxidation TechniquesS. Lang; A. Schewski; I. Eisele; C. Kutter; W. Lerch2023
Epitaxy of Group-IV Semiconductors for Quantum ElectronicsJ. M. Hartmann; N. Bernier; F. Pierre; J. P. Barnes; V. Mazzocchi; J. Krawczyk; G. Lima; E. Kiyooka; S. De Franceschi2023
Internal Friction, Mechanical Spectroscopy in SiO_2/Si WafersY. A. Onanko; D. V. Charnyi; A. P. Onanko; E. M. Matseliuk; O. P. Dmytrenko; M. P. Kulish; T. M. Pinchuk-Rugal; P. P. Ilyin; A. A. Kuzmych2023
The Future of Nanoelectronics Devices from a Theoretical Point of View: The Search for New Channel MaterialsMassimo V. Fischetti; Sanjay Gopalan; Gautam Gaddemane; Maarten Van de Put; William Vandenberghe2023
Role of Proportion of Surrounding Gate on the Improved Transient Behavior of MIS Tunnel Diode with Ultra-Thin Metal Surrounded Gate (UTMSG)Sung-Wei Huang; Jenn-Gwo Hwu2023
Influence of Outer Oxide Charges on the Electrostatics of Metal-Insulator-Semiconductor Tunnel DiodeKung-Chu Chen; Kuan-Wun Lin; Jenn-Gwo Hwu2023
Integration of InP Heterojunction Bipolar Transistors on Silicon Substrates for 6G NetworksB. Kunert; Y. Mols; R. Alcotte; P. Swekis; S. Yadav; A. Vais; A. Kumar; G. Boccardi; R. Langer; B. Parvais; N. Collaert2023
III-V Integration on Silicon for Resource-efficient Sensor-TechnologyR. Quay; A. Leuther; S. Chartier; L. John; A. Tessmann2023
Potential of Silicon Oxide Films for Low-Cost and High-Performance Resistive Switching DevicesY. Omura2023
Improved RFET Performance Using Dual-Aluminum-Contact (DAC)H. L. Carvalho; R. C. Rangel; K. R. A. Sasaki; L. S. Yojo; P. G. D. Agopian; J. A. Martino2023
Optical Properties of Sputtered Iron Sulfide for Photonic Device ApplicationsAwais Zaka; Sabina Abdul Hadi; Saeed Alhassan; Ammar Nayfeh2023
Cryogenic Electronics For Quantum Computing ICs: What Can Bring FDSOIM. Casse; B. Cardoso Paz; F. Bergamaschi; G. Ghibaudo; F. Balestra; M. Vinet2023
New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High TemperaturesS. P. Gimenez; E. H. S. Galembeck2023
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM DevicesB. Pruckner; S. Fiorentini; W. Goes; S. Selberherr; V. Sverdlov2023
MoS_2-Based MOS Capacitor for In-Memory Light SensingD. Kumar; A. Rizk; A. Nayfeh; N. E. Atab2023
Operational Transconductance Amplifier Designed with Experimental Omega-Gate Nanowire SOI MOSFETsG. V. de Araujo; J. A. Martino; P. G. D. Agopian2023
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