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期刊


ISSN2661-8028
刊名Tungsten
参考译名钨科技
收藏年代2020～2024



全部

2020 2021 2022 2023 2024

2023, vol.5, no.1 2023, vol.5, no.2 2023, vol.5, no.3 2023, vol.5, no.4

题名作者出版年年卷期
Investigation of the room-temperature photoelectron spectroscopy of type-II Weyl semimetal candidate WTe2Ding Jian-Yang; Liu Zheng-Tai; Huang Zhe; Jiang Zhi-Cheng; Yang Yi-Chen; Liu Zhong-Hao; Liu Ji-Shan; Guo Yan-Feng; Shen Da-Wei20232023, vol.5, no.3
Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopyFang Hong-Wei; Liang Ai-Ji; Schr?ter Niels B. M.; Cui Sheng-Tao; Liu Zhong-Kai; Chen Yu-Lin20232023, vol.5, no.3
Electrical and thermal transport properties of kagome metals AV3Sb5 (A?=?K, Rb, Cs)Mi Xin-Run; Yang Kun-Ya; Gan Yu-Han; Zhang Long; Wang Ai-Feng; Chai Yi-Sheng; Zhou Xiao-Yuan; He Ming-Quan20232023, vol.5, no.3
Node line semimetal states in tungsten-based materialsWu Ping-Ru; Zhang Ming-Hao; Xu Gao; Liu Xin-Gen; Liu Zhun; Liang Qi-Feng20232023, vol.5, no.3
Superconducting and structural properties of the phosphorus-rich Nb2P5 superconductor under high pressureChen Lei-Ming; Wei Fang-Huang; Chen Yan-Hong; Liu Hang-Qi; Xu Yang; Chen Bo-Yu; Dai Can-Li; Zhang Yu-Bo; Yu Zhen-Hai20232023, vol.5, no.3
Electronic and topological properties of kagome lattice LaV3Si2Chen Xue-Jiao; Zhang Bing-Wen; Han Dong; Zhong Zhi-Cheng20232023, vol.5, no.3
Visualization of ferromagnetic domains in vanadium-doped topological insulator thin films and heterostructuresMa Ying-Jie; Xia Ti-Rui; Wang Wen-Bo20232023, vol.5, no.3
Anisotropic transport in a possible quasi-one-dimensional topological candidate: TaNi2Te3Liu Yi; Xu Chun-Qiang; Jiao Wen-He; Cai Ping-Gen; Li Bin; Zhou Wei; Qian Bin; Jiang Xue-Fan; R Kalaivaman; Sankar Raman; Ke Xiang-Lin; Cao Guang-Han; Xu Xiao-Feng20232023, vol.5, no.3
Preface to the special issue on topological materialsGuo Yan-Feng20232023, vol.5, no.3
Dual topology in van der Waals-type superconductor Nb2S2CShi Xian-Biao; He Peng; Zhao Wei-Wei20232023, vol.5, no.3



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