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刊名
Advanced Electronic Materials
参考译名
先进电子材料
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2020, vol.6, no.1
2020, vol.6, no.10
2020, vol.6, no.11
2020, vol.6, no.12
2020, vol.6, no.2
2020, vol.6, no.3
2020, vol.6, no.4
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2020, vol.6, no.6
2020, vol.6, no.7
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2020, vol.6, no.9
题名
作者
出版年
年卷期
Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors
Zhai Yongbiao; Roy Vellaisamy A. L.; Zhou Ye; Han Su‐Ting; Ding Guanglong; Yang Baidong; Zhou Kui; Zhang Chen; Wang Yaxin; Yang Jia‐Qin
2020
2020, vol.6, no.1
Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor
Xiao Ming; Shen Daozhi; Futscher Moritz H.; Ehrler Bruno; Musselman Kevin P.; Duley Walter W.; Zhou Y. Norman
2020
2020, vol.6, no.1
Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr
2
2 X
3
3 (X=O,S,Se) Monolayers
Chen Jian‐Yong; Li Xing‐Xing; Zhou Wen‐Zhe; Yang Jin‐Long; Ouyang Fang‐Ping; Xiong Xiang
2020
2020, vol.6, no.1
Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics
Sun Zixiong; Wang Zhuo; Tian Ye; Wang Ge; Wang Wen; Yang Mengdie; Wang Xiaoying; Zhang Fanghui; Pu Yongping
2020
2020, vol.6, no.1
Rewritable Optical Memory Based on Sign Switching of Magnetoresistance
He Anpeng; Liu Guozhen; Lu Hao; Zhao Run; Gao Ju; Wu Quanying; Zheng Changcheng; Jiang Yucheng; Li Liang
2020
2020, vol.6, no.1
A Shallow Acceptor of Phosphorous Doped in MoSe
2
2 Monolayer
Xia Yipu; Zhang Junqiu; Yu Zhoubin; Jin Yuanjun; Tian Hao; Feng Yue; Li Bin; Ho Wingkin; Liu Chang; Xu Hu; Jin Chuanhong; Xie Maohai
2020
2020, vol.6, no.1
Masthead: (Adv. Electron. Mater. 1/2020)
2020
2020, vol.6, no.1
Humidity Sensors Based on 3D Porous Polyelectrolytes via Breath Figure Method
Dai Jianxun; Zhao Hongran; Lin Xiuzhu; Liu Sen; Fei Teng; Zhang Tong
2020
2020, vol.6, no.1
Cross‐Bar SnO
2
2 ‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity
Long Zhenghao; Xu Xiaojie; Yang Wei; Hu Mingxiang; Shtansky Dmitry V.; Golberg Dmitri; Fang Xiaosheng
2020
2020, vol.6, no.1
High‐Mobility and Air‐Stable Amorphous Semiconductor Composed of Earth‐Abundant Elements: Amorphous Zinc Oxysulfide
Zhu Yuting; Yamazaki Takanori; Chen Zhen; Hirose Yasushi; Nakao Shoichiro; Harayama Isao; Sekiba Daiichiro; Hasegawa Tetsuya
2020
2020, vol.6, no.1
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