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期刊


ISSN8755-3996
刊名IEEE Circuits & Devices
参考译名IEEE电路与元器件杂志
收藏年代1998～2006



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006

2005, vol.21, no.1 2005, vol.21, no.2 2005, vol.21, no.3 2005, vol.21, no.4 2005, vol.21, no.5 2005, vol.21, no.6

题名作者出版年年卷期
A PERSPECTIVE FROM THE 2003 ITRS: MOSFET Scaling trends, challenges, and potential soultionsPeter M. Zeitzoff; James E. Chung20052005, vol.21, no.1
THE END OF CMOS SCALING: Toward the introduction of new materials and structural changes to improve MOSFET performanceThomas Skotnicki; James A. Hutchby; Tsu-Jae King; H.-S. Philip Wong; Frederic Boeuf20052005, vol.21, no.1
THE POWER OF FUNCTIONAL SCALING: Beyond the power consumption challenge and the scaling roadmapAlbert Chin; Sean P. McAlister20052005, vol.21, no.1



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