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期刊


ISSN1350-2409
刊名IEE proceedings
参考译名英国电气工程师学会论文集：电子线路与系统
收藏年代1998～2006

关联期刊参考译名收藏年代
IET Circuits, Devices & SystemsIET电子线路与系统2007～2012


全部

1998 1999 2000 2001 2002 2003
2004 2005 2006

2004, vol.151, no.1 2004, vol.151, no.2 2004, vol.151, no.3 2004, vol.151, no.4 2004, vol.151, no.5 2004, vol.151, no.6

题名作者出版年年卷期
0.25 micrometre smart power technology optimised for wireless and consumer applicationsR. Zhu; V. Parthasarathy; V. Khemka; A. Bose; T. Roggenbauer; G. Lee; B. Baumert; P. Hui; P. Rodriquez; D. Collins20042004, vol.151, no.3
Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuitsU. N. K. Udugampola; R. A. McMahon; F. Udrea; K. Sheng; G. A. J. Amaratunga; E. M. S. Narayanan; S. Hardikar; M. M. De Souza20042004, vol.151, no.3
High-power AIGaN/GaN HFET with lower on-state resistance and higher switching time for an inverter circuitS. Yoshida; J. Li; T. Wada; H. Takehara20042004, vol.151, no.3
600V-IGBT3: trench field stop technology in 70 μm ultra thin wafer technologyH. Ruthing; F. Umbach; O. Hellmund; P. Kanschat; G. Schmidt20042004, vol.151, no.3
High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applicationsS. Xu; F. Baiocchi; H. Safar; J. Lott; A. Shibib; Z. Xie; T. Nigam; B. Jones; B. Thompson; J. Desko; P. Gammel20042004, vol.151, no.3
Analysis of dynamic impatt oscillations caused by radiation induced deep centres with local and homogenous vertical distributionR. Siemieniec; J. Lutz; R. Herzer20042004, vol.151, no.3
Improved method for determining inversion layer mobility of electrons in trench MOFETsM. G. L. van den Heuvel; R. J. E. Hueting; E. A Hijzen; M. A. A. in 't Zandt20042004, vol.151, no.3
3.6 mΩcm{sup}2, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applicationsJ. H. Zhao; K. Tone; X. Li; P. Alexandrov; L. Fursin; M. Weiner20042004, vol.151, no.3
W-gated trench power MOSFET (WFET)M. Darwish; C. Yue; K.H. Lui; F. Giles; B. Chan; K. -I. Chen; D. Pattanayak; Q. Chen; K. Terrill; K. Owyang20042004, vol.151, no.3
Reverse blocking IGBT for matrix converter with ultra-thin wafer technologyM. Takei; T. Naito; K. Ueno20042004, vol.151, no.3
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